第一个商业化的vdW碲(b相)晶体。利用磁通带生长技术合成了层状碲晶体。该晶体具有99.9999% (6N)的额定纯度，并以完美的原子顺序结晶。分层碲(Te)有一个三角晶格(见产品图片)，其中Te原子的单个螺旋链通过范德瓦尔斯型键堆叠在一起，并在六边形单元格的中心和角沿平行于[0001]的轴线螺旋。碲具有可调谐带隙，从接近直接的0.31 eV(体积)到间接的1.17 eV (2L)和直接的1.3 eV (1L)[3]。它在某些条件下表现出金属性能，甚至可以作为DCWs的主机。它在第一布里渊区有四个(两个)复杂的、高度各向异性和层相关的空穴(电子)袋，空穴迁移率极高，理论上可达~1E5 cm2/Vs值[1-3]。
The first commercial vdW Tellurium (b-phase) crystals. Layered tellurium crystals have been synthesized in perfectly vdW order through flux zone growth technique. The crystal has 99.9999% (6N) rated purity and has been crystalized in perfect atomic order. Layered tellurium (Te) has a trigonal crystal lattice (see product images) in which individual helical chains of Te atoms are stacked together by van der Waals type bonds and spiral around axes parallel to the [0001] direction at the center and corners of the hexagonal elementary cell [1-2]. Tellurene exhibits a tunable bandgap varying from nearly direct 0.31 eV (bulk) to indirect 1.17 eV (2L) and direct at 1.3 eV (1L) [3]. It has been shown to exhibit metallic behavior under certain conditions and even host DCWs. It has four (two) complex, highly anisotropic and layer-dependent hole (electron) pockets in the first Brillouin zone with an extraordinarily high hole mobility reaching up to theoretical ～1E5 cm2/Vs value [1-3].
Physical size ~1cm or larger;
Note: This product is same as tellurene material. While material itself is perfectly crystallized in trigonal form (weakly coupled Te chains are present), it is inherently harder to exfoliate in comparison to graphene or MoS2. For best results, we recommend using strongly adhesive tapes or liquid exfoliation technique.
Related references
[1] "Two-dimensional tellurium" Nature 552, 40-41 (2017)
[2] "Large-area solution-grown 2D tellurene for air-stable, high-performance field-effect transistors"; arXiv:1704.06202
[3] "Few-layer Tellurium: one-dimensional-like layered elementary semiconductor with striking physical properties"
